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Aluminum nitride melting point:

AlN is an electrically insulating ceramic material which has a high thermal conductivity and a wide band gap (6.2 eV). This makes it a good choice for use in a variety of semiconductor devices that have to handle energy at high speeds. It is also an alternative to beryllium oxide for many microelectronic applications.

crystalline aluminium nitride is a piezoelectric material, and epitaxial growth of this material can be used to create surface acoustic wave sensors. It is also used to make RF filters in mobile phones.

This material has many advantages over other group III-nitride materials such as silicon carbide and gallium nitride, including its extremely wide direct band gap. Moreover, it has an extremely large spontaneous polarization.

Its non-centrosymmetric wurtzite crystal structure, in which aluminum and nitrogen atoms have different electronegativity values, leads to a large spontaneous polarization along the c-axis. This polarization can induce free carriers at III-nitride heterostructure interfaces completely dispensing with the need for intentional doping.

Although it is an attractive material for microelectronic applications, growing AlN single crystals in large quantities remains a challenge due to numerous issues. The most promising growth method is sandwich sublimation of AlN powder at high temperatures, which has been shown to produce high-quality and large-sized crystals.

The growth of AlN is a complex process that requires crucibles, reactors and other equipment that must be well-designed and stable over the long term. In addition, the process must be controlled and scalable to produce larger AlN crystals for use in devices.